Transistors Bipolar - BJT NPN Si Transistor
Type Designator: BUV95 Material of transistor: Si Polarity: NPN Maximum collector power dissipation (Pc), W: 15 Maximum collector-base voltage |Ucb|, V: 1000 Maximum collector-emitter voltage |Uce|, V: 450 Maximum emitter-base voltage |Ueb|, V: 0 Maximum collector current |Ic max|, A: 2 Maximum junction temperature (Tj), °C: 150 Transition frequency (ft), MHz: Collector capacitance (Cc), pF: Forward current transfer ratio (hFE), min: 4 Noise Figure, dB: - Package of BUV95 transistor: TO220